NON-VOLATILE MEMORY ELEMENT AND METHOD OF OPERATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory element that can operate with high reliability without having to use channel boosting, and to provide a method of operating the same.

SOLUTION: The non-volatile memory element has a plurality of memory transistors disposed on a semiconductor substrate with a NAND string, string selection transistors disposed at one-side ends of the plurality of memory transistors on the semiconductor substrate, ground selecting transistors disposed in other ends of the plurality of memory transistors on the semiconductor substrate, and a bit line electrically connected to the semiconductor substrate and to the gate electrode of the ground selecting transistor.

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