| 摘要 |
PROBLEM TO BE SOLVED: To prevent an active species that chemically decomposes staining from reaching over to the treated surface of a substrate treated so as not to damage the treated surface, when removing the deposits adhered to the edge of the substrate. SOLUTION: The flow of a backside gas 236 is formed on a surface of the backside of an edge in a wafer W, and the flow of a front surface gas 246 in the same direction as in the backside gas is also formed on the front surface to make the velocity of the backside gas faster than that of the front surface gas in performing cleaning treatment, by irradiating the edge of the wafer W with ultraviolet rays. This surely prevents the active species, generated on the backside of the edge in the wafer from reaching over to the front surface of the wafer, because a descending current 238 flowing from the front surface of the wafer to the backside is formed, even if a gap G is created between the edge of the wafer and a partition 220. COPYRIGHT: (C)2009,JPO&INPIT |
