METHOD FOR MANUFACTURING MONOSILICON HAVING IMPROVED GATE OXIDE COMPLETENESS

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating the gate oxide completeness of a population of monosilicon wafers. SOLUTION: The method includes a step that increases a stress extent at a first proportion from an initial value to a final value by measuring a first subset breakdown property of a population of the monosilicon wafers as a function of the stress extent that is applied to the first subset, a step that is of a second proportion different from the first proportion by measuring the second subset breakdown property of the population as a function of the stress extent that is applied to the second subset to increase the stress extent at a second proportion from an initial value to a final value, and a step that forecasts gate oxide fault rate under the condition defined of the population by using the breakdown property measured in the two steps. COPYRIGHT: (C)2009,JPO&INPIT