| 摘要 |
Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system (10) includes a process chamber (16) with a peripheral sidewall (36), partitions (68, 70, 72, 74) that divide a processing space (38) inside the process chamber (16) into at least two compartments (76, 78), and a platter (50) that supports substrates (15) within the processing space (38). The platter (50) rotates the substrates (15) relative to the stationary peripheral sidewail (36) and compartments (76, 78). One compartment (76) receives a process material used to deposit a layer on each of the substrates (15) and the other compartment (78) contains an inert gas. A material injector (100, 100a, 100b), which injects the process materia!, communicates with the compartment (76) through the peripheral sidewall (36). |
