| 摘要 |
A dry etching gas comprising a C<SUB>4-6 </SUB>fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O<SUB>2</SUB>, O<SUB>3</SUB>, CO, CO<SUB>2</SUB>, CHF<SUB>3</SUB>, CH<SUB>2</SUB>F<SUB>2</SUB>, CF<SUB>4</SUB>, C<SUB>2</SUB>F<SUB>6</SUB>, and C<SUB>3</SUB>F<SUB>8</SUB>; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.
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