发明名称 PIEZOELECTRIC THIN-FILM ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin-film element containing a potassium sodium niobate thin film having excellent piezoelectric characteristics. <P>SOLUTION: The piezoelectric thin-film element 8 has a structure in which at least a lower electrode 2 such as platinum, a piezoelectric thin-film 3 having a perovskite structure represented by general formula (K<SB>x</SB>Na<SB>1-x</SB>)NbO<SB>3</SB>(0<x<1) and having a film thickness of 0.2-10μm, and an upper electrode 4 such as platinum are disposed on a substrate 1, wherein the composition of K, Na and Nb in the piezoelectric thin-film 3 satisfies the relation 1.15<(K+Na)/Nb<1.50. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008270514(A) 申请公布日期 2008.11.06
申请号 JP20070111315 申请日期 2007.04.20
申请人 HITACHI CABLE LTD 发明人 SHIBATA KENJI;OKA FUMITO
分类号 H01L41/09;H01L41/08;H01L41/18;H01L41/316;H01L41/39 主分类号 H01L41/09
代理机构 代理人
主权项
地址