发明名称 MANUFACTURING METHOD OF GAS BARRIER FILM
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a gas barrier film having high transparency and high gas barrier property, which does not require the control of oxygen partial pressure in film formation and has a high productivity. SOLUTION: In the manufacturing method of the gas barrier film, an SiO<SB>x</SB>film is formed at least on one surface of a base material film by electron beam vapor deposition method (EB) under an environment introducing no reaction gas while using an SiO vapor deposition material, wherein the SiO vapor deposition material is sintered in the presence of oxygen. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008266760(A) 申请公布日期 2008.11.06
申请号 JP20070115055 申请日期 2007.04.25
申请人 TOPPAN PRINTING CO LTD 发明人 KAWASHIMA SACHIKO;ISHII RYOJI
分类号 C23C14/10;C23C14/24 主分类号 C23C14/10
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