| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems of a performance improving technique in microfabrication of a semiconductor element, and to provide a negative resist composition which simultaneously satisfies high sensitivity, high resolution, a good pattern profile, good line edge roughness and good PED property in vacuum in microfabrication of a semiconductor element particularly using electron beams or X-rays and a pattern forming method using the composition. <P>SOLUTION: The negative resist composition includes: (A) an alkali-soluble polymer containing a specific repeating unit; (B) a crosslinking agent capable of crosslinking with the alkali-soluble polymer (A) under an action of an acid; (C) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (D) a specific quaternary ammonium salt; and (E) an organic carboxylic acid. The pattern forming method using the composition is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
