| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nominally off, or an enhancement mode, device with a III-nitride switch including a recessed gate contact. SOLUTION: By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive, to prevent current flow in the device. The gate electrode can be a Schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device. COPYRIGHT: (C)2009,JPO&INPIT |
