PHASE CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME

摘要

A memory device using a phase change material and a method for forming the same are disclosed. One embodiment of a memory device includes a first insulating layer provided on a substrate and defining an opening; a first conductor including a first portion and a second portion, the first portion provided on a bottom of the opening, the second portion being continuously provided along a sidewall of the opening; a variable resistor connected to the second portion of the first conductor and provided along the sidewall of the opening; and a second conductor provided on the variable resistor.