发明名称 HIGH EFFICIENCY AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To provide a high efficiency amplifier equipped with a control circuit which can apply a control signal with no waveform distortion to a gate electrode of an RF power amplification transistor, enables the power supply voltage of the control circuit to be reduced and the output impedance thereof to be made low. SOLUTION: The high efficiency amplifier is equipped with an amplifier (110) including a transistor for receiving and amplifying an RF signal, a control signal generating means (101, 108 and 109) for generating a control signal corresponding to an envelope signal of the RF signal or a baseband signal from the envelope signal or the base band signal, and a control driver (115) for applying the control signal from the control signal generating means to the gate electrode of the transistor of the amplifier, wherein the control driver comprises a circuit with a low output impedance. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008271172(A) 申请公布日期 2008.11.06
申请号 JP20070111222 申请日期 2007.04.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISHIZAKA SATORU;YAMAUCHI KAZUHISA;NAKAYAMA MASATOSHI;HORIGUCHI KENICHI;ONAKA YASUKIMI
分类号 H03F1/02;H03F1/32;H03F3/24;H04B1/04 主分类号 H03F1/02
代理机构 代理人
主权项
地址