发明名称 |
A semiconductor device and method of its manufacture |
摘要 |
<p>A semiconductor device comprising a vertical stack of layers, comprising:
an active layer configured to support a two dimensional carrier gas having an excess of carriers;
source and drain contacts provided to said active layer such that a current can flow between said source and drain contacts through said two dimensional carrier gas;
a lower conducting region,
wherein said lower contact conducting region is a patterned lower conducting region such that said active layer is suspended across gaps in said lower conducting region and said active layer is physically supported by and suspended between parts of said lower conducting region.
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申请公布号 |
EP1577951(A3) |
申请公布日期 |
2008.11.05 |
申请号 |
EP20050251502 |
申请日期 |
2005.03.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SEE, PATRICK UN SIONG;SHIELDS, ANDREW JAMES |
分类号 |
H01L29/778;H01L21/00;H01L21/335;H01L29/06;H01L29/417;H01L29/423 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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