| 摘要 |
<p>The present invention relates to a capacitor having a configuration in which capacitors are coupled in series to each other. The capacitor formed on a substrate according to an exemplary embodiment of the present invention includes: a polysilicon layer doped with an impurity; a first insulation layer formed on the polysilicon layer; a first metal layer formed on the first insulation layer and including first and second areas; a second insulation layer formed on the first metal layer; and a second metal layer formed on the second insulation layer and coupled to the second area of the first metal layer. The second metal layer is overlapped with at least a part of the first area of the first metal layer.</p> |
