| 摘要 |
A method is provided for manufacturing a bonded substrate wherein a wafer for an active layer is bonded with a wafer for a supporting substrate. The method is characterized in that the method is provided with a first step of arranging a groove over the entire circumference along the outer circumference section on the inner side on the surface of the wafer for the active layer; a second step of bonding the wafer for the active layer with the wafer for supporting the substrate by using a plane having the groove as a bonding plane; and a third step of thinning the wafer for the active layer and also removing an uncoupled section on the outer side, from the groove on the wafer for the active layer. Thus, the steps are simplified, cracks, chipping, particle generation and the like are eliminated at the time of thinning the wafer for the active layer, and the edge portion shape of the wafer for the active layer is controlled. |
