Acceleration sensor and process for the production thereof

摘要

A single crystal silicon substrate ( 1 ) is bonded through an SiO₂ film ( 9 ) to a single crystal silicon substrate ( 8 ), and the single crystal silicon substrate ( 1 ) is made into a thin film. A cantilever ( 13 ) is formed on the single crystal silicon substrate ( 1 ), and the thickness of the cantilever ( 13 ) in a direction parallel to the surface of the single crystal silicon substrate ( 1 ) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate ( 1 ), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever ( 13 ) and the part of the single crystal silicon substrate ( 1 ), opposing the cantilever ( 13 ), are, respectively, coated with an SiO₂ film ( 5 ), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit ( 10 ) is formed on the single crystal silicon substrate ( 1 ), so that signal processing is performed as the cantilever ( 13 ) moves.