发明名称 |
Method of manufacturing semiconductor device, acid etching resistant material and copolymer |
摘要 |
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R<SUP>1 </SUP>is a hydrogen atom or methyl group; R<SUP>3 </SUP>is a cyclic group selected from an alicyclic group and an aromatic group; R<SUP>4 </SUP>is a polar group; R<SUP>2 </SUP>is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R<SUP>5 </SUP>is a hydrogen atom or methyl group).
|
申请公布号 |
US7445881(B2) |
申请公布日期 |
2008.11.04 |
申请号 |
US20070679660 |
申请日期 |
2007.02.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ASAKAWA KOJI;OHASHI KENICHI;FUJIMOTO AKIRA;SASAKI TAKASHI |
分类号 |
G03C1/00;C08F220/28;G03C7/00;H01L21/00;H01L21/306;H01L21/308;H01L21/78;H01L33/22 |
主分类号 |
G03C1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|