发明名称 Method of manufacturing solid-state imaging device and solid-state imaging device
摘要 After electrode pads 20 formed on a silicon substrate 1 and an electrode 21 to be connected thereto are exposed, a photoelectric conversion layer 12 is formed via a first mask 23 which covers exposed surfaces of the electrode pads 20 and the electrode 21 . Then, a second electrode 13 is formed on a third electrode via a second mask 26 in which an opening is formed. This establishes a connection between the second electrode 13 and the electrode pads 20.
申请公布号 US7445947(B2) 申请公布日期 2008.11.04
申请号 US20070709782 申请日期 2007.02.23
申请人 FUJIFILM CORPORATION 发明人 INUIYA MASAFUMI
分类号 H01L21/00;H01L27/146;H04N5/335;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L21/00
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