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发明名称
藉由粗糙化以改善光萃取之发光二极体
摘要
一种半导体发光二极体(LED)装置之制造系统与方法,其系藉由在LED装置上形成一n型氮化镓(nGaN)层制造而成;以及使nGaN层之表面粗糙化以自LED装置内部取出光。
申请公布号
TW200843149
申请公布日期
2008.11.01
申请号
TW096149357
申请日期
2007.12.21
申请人
旭明光电股份有限公司
发明人
陈长安;段忠;朱振甫;郑好钧;樊旭
分类号
H01L33/00(2006.01);H01L21/00(2006.01);H01L29/24(2006.01)
主分类号
H01L33/00(2006.01)
代理机构
代理人
周良谋;周良吉
主权项
地址
苗栗县竹南镇新竹科学工业园区科中路13号7楼
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