| 摘要 |
<p>A method for forming a semiconductor device is provided to prevent impurities used to a PMD layer in a PMD liner process from transmitting to the lower transistor structure. A method for forming a semiconductor device comprises; forming a transistor structure on a semiconductor substrate(300); performing a decompress process in a deposition chamber including the semiconductor substrate; injecting a gas including F into the deposition chamber; stabilizing the temperature and flow of TEOS gas; performing a deposition process by applying power for plasma to the deposition chamber, and forming a silicon oxide layer including F impurity as a F-TEOS layer(330) on the transistor structure; forming a BPSG(Boro-Phos-pho-Silicate Glass) or a SG(Phospho-Silicate Glass) layer as PMD layer(340) on the silicon oxide layer.</p> |
