发明名称 |
MEMORY ARRAY ARCHITECTURE FOR A MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY ARRAY ARCHITECTURE |
摘要 |
A high integration memory array architecture of the present invention includes a memory cell array including memory cells arranged in a predetermined configuration, and selection transistors having different threshold voltages so as to select a memory string of the memory cell array. By applying a proper bias voltage to the selection transistors, specific memory strings can be selected, so that operations for the memory array can be performed without intervening with adjacent memory cells.
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申请公布号 |
US2008266952(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080166246 |
申请日期 |
2008.07.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KI-TAE;CHOI JUNG-DAL |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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