| 摘要 |
Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere. |
