METHOD FOR IMPROVING INTERFACE REACTIONS AT SEMICONDUCTOR SURFACES

摘要

The present invention describes a method for producing ultra-thin thermally stoichiometric or almost stoichiometric nitrides on semiconductor wafers. The method according to the invention includes the H+- or D+-passivation of the free semiconductor surface, followed by nitriding either in an RTP system, an oven or in plasma. Compounds containing deuterium are preferred in all of the method steps of the invention in order to passivate the interface layer between the silicon surface and the dielectric.