发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING IT |
摘要 |
A semiconductor device which has a semiconductor body and a method for producing it. At the semiconductor body, a first electrode which is electrically connected to a first near-surface zone of the semiconductor body and a second electrode which is electrically connected to a second zone of the semiconductor body are arranged. A drift section is arranged between the first and the second electrode. In the drift section, a coupling structure is provided for at least one field plate arranged in the drift section. The coupling structure has a floating first area doped complementarily to the drift section and a second area arranged in the first area. The second area forms a locally limited punch-through effect or an ohmic contact to the drift section, and the field plate is electrically connected at least to the second area.
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申请公布号 |
US2008265329(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080112624 |
申请日期 |
2008.04.30 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;FALCK ELMAR;SCHULZE HANS-JOACHIM |
分类号 |
H01L29/06;H01L21/00;H01L21/8234 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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