发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING IT
摘要 A semiconductor device which has a semiconductor body and a method for producing it. At the semiconductor body, a first electrode which is electrically connected to a first near-surface zone of the semiconductor body and a second electrode which is electrically connected to a second zone of the semiconductor body are arranged. A drift section is arranged between the first and the second electrode. In the drift section, a coupling structure is provided for at least one field plate arranged in the drift section. The coupling structure has a floating first area doped complementarily to the drift section and a second area arranged in the first area. The second area forms a locally limited punch-through effect or an ohmic contact to the drift section, and the field plate is electrically connected at least to the second area.
申请公布号 US2008265329(A1) 申请公布日期 2008.10.30
申请号 US20080112624 申请日期 2008.04.30
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 HIRLER FRANZ;FALCK ELMAR;SCHULZE HANS-JOACHIM
分类号 H01L29/06;H01L21/00;H01L21/8234 主分类号 H01L29/06
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