摘要 |
Single-sided polishing of semiconductor wafers provided with a relaxed Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer involves polishing of a multiplicity of wafers in a plurality of polishing runs, a polishing run having at least one polishing step, at least one of the multiplicity of wafers obtained with a polished Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer at the end of each polishing run; moving the wafer during the polishing step over a rotating polishing plate provided with a polishing cloth while applying polishing pressure, and supplying polishing agent between the polishing cloth and the semiconductor wafer, the polishing agent containing an alkaline component and a component that dissolves germanium. Semiconductor wafer having a Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer substantially free of defects and haze is produced.
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