METHOD FOR FABRICATION THE IMAGE SENSER

摘要

A method for fabrication the image sensor is provided to prevent a dark current caused by a plasma process. A method for fabrication the image sensor comprises a step for forming an interlayer dielectric including a metal line and pad on a semiconductor substrate; a step for forming a color filter array on the interlayer dielectric; a step for forming a microlens on the color filter array; a step for forming a capping layer on the semiconductor substrate having the microlens; a step for forming a pad mask on the capping layer; a step for exposing the pad.