| 摘要 |
A power-down generating circuit for preventing mulfunction in power-up is provided to prevent mulfuction of a semiconductor memory device by making a deep power-down disable at the beginning of power up even if the deep power-down command is generated. In a memory device, a deep power-down generating block(100) generates a deep power-down and is enabled in response to a deep power-down command. A deep down enable block(200) is enabled a chip selection signal and is suppressed in case that a power-up signal is disable. A chip selection response unit enables a deep power enable signal in response to inversed chip selection signal and is enabled in response to a selection enable signal.
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