| 摘要 |
A method and structure for providing a high energy implant in only the red pixel location of a CMOS image sensor. The implant increases the photon collection depth for the red pixels, which in turn increases the quantum efficiency for the red pixels. In one embodiment, a CMOS image sensor is formed on an p-type substrate and the high energy implant is a p-type implant that creates a p-type ground contact under the red pixel, thus reducing dark non-uniformity effects. In another embodiment, a CMOS image sensor is formed on an n-type substrate and a high energy p-type implant creates a p-type region under only the red pixel to increase photon collection depth, which in turn increases the quantum efficiency for the red pixels.
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