MOSFET DEVICE INCLUDING A SOURCE WITH ALTERNATING P-TYPE AND N-TYPE REGIONS

摘要

Apparatus and methods are provided for fabricating semiconductor devices with reduced bipolar effects. One apparatus includes a semiconductor body ( 120 ) including a surface and a transistor source ( 300 ) located in the semiconductor body proximate the surface, and the transistor source includes an area ( 310 ) of alternating conductivity regions ( 3110, 3120 ). Another apparatus includes a semiconductor body ( 120 ) including a first conductivity and a transistor source ( 500 ) located in the semiconductor body. The transistor source includes multiple regions ( 5120 ) including a second conductivity, wherein the regions and the semiconductor body form an area ( 510 ) of alternating regions of the first and second conductivities. One method includes implanting a semiconductor well ( 120 ) including a first conductivity in a substrate ( 110 ) and implanting a plurality of doped regions ( 5120 ) comprising a second conductivity in the semiconductor well. An area ( 510 ) comprising regions of alternating conductivities is then formed in the semiconductor well.