发明名称 |
THE FABRICATION METHOD OF OPENED HOLE POROUS SILICON MEMBRANE |
摘要 |
An opened hole porous silicon membrane can be used in the field including a porous high temperature film by forming an opened hole structure while having a thick thickness as compared with the conventional silicon membrane. An opened hole porous silicon membrane is produced by electrochemically reacting non-porous silicon with an etchant. The non-porous silicon is used in a thickness range of 100 ~ 480 ‘í, and the etchant is a mixture of hydrofluoric acid(HF) and dimethylformamide(DMF) in a weight ratio of 1 ~ 3 : 7 ~ 9. The electrochemical reaction is performed at 0 - 50 deg.C for 40min ~4hr under the conditions of 10 ~ 100 mA constant current, and 110 ~ 250 Фcm surface resistance. |
申请公布号 |
KR20080096106(A) |
申请公布日期 |
2008.10.30 |
申请号 |
KR20070041093 |
申请日期 |
2007.04.27 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY;SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SHUL, YONG GUN;KIM, BEOM TAEK;JANG, JAE HYUK;LEE, HONG RYUL |
分类号 |
C09D183/04;C09D5/44;H01L21/20 |
主分类号 |
C09D183/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|