发明名称 THE FABRICATION METHOD OF OPENED HOLE POROUS SILICON MEMBRANE
摘要 An opened hole porous silicon membrane can be used in the field including a porous high temperature film by forming an opened hole structure while having a thick thickness as compared with the conventional silicon membrane. An opened hole porous silicon membrane is produced by electrochemically reacting non-porous silicon with an etchant. The non-porous silicon is used in a thickness range of 100 ~ 480 ‘í, and the etchant is a mixture of hydrofluoric acid(HF) and dimethylformamide(DMF) in a weight ratio of 1 ~ 3 : 7 ~ 9. The electrochemical reaction is performed at 0 - 50 deg.C for 40min ~4hr under the conditions of 10 ~ 100 mA constant current, and 110 ~ 250 Фcm surface resistance.
申请公布号 KR20080096106(A) 申请公布日期 2008.10.30
申请号 KR20070041093 申请日期 2007.04.27
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY;SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 SHUL, YONG GUN;KIM, BEOM TAEK;JANG, JAE HYUK;LEE, HONG RYUL
分类号 C09D183/04;C09D5/44;H01L21/20 主分类号 C09D183/04
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