摘要 |
We have discovered that adding H<SUB>2 </SUB>to a precursor gas composition including SiH<SUB>4</SUB>, NH<SUB>3</SUB>, and N<SUB>2 </SUB>is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiN<SUB>x</SUB>:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H<SUB>2 </SUB>to the SiH<SUB>4</SUB>/NH<SUB>3</SUB>/N<SUB>2 </SUB>precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm<SUP>2 </SUP>and larger.
|