发明名称 |
METHOD FOR FABRICATING A HIGH-K DIELECTRIC LAYER |
摘要 |
One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.
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申请公布号 |
US2008265380(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080104353 |
申请日期 |
2008.04.16 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC);MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
RAGNARSSON LARS-AKE;ZIMMERMAN PAUL;YAMAMOTO KAZUHIKO;SCHRAM TOM;DEWEERD WIM;BRUNCO DAVID;DE GENDT STEFAN;VANDERVORST WILFRIED |
分类号 |
H01L23/58;H01L21/469 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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