| 摘要 |
An asymmetric semiconductor device ( 3 ) that includes an integrated high voltage diode ( 72 ), including: a substrate comprising an epitaxial layer ( 47 ) and a deep well implant ( 42 ) of a first type patterned above the epitaxial layer; a shallow trench isolation (STI) region ( 46 ) separating a cathode from an anode; a first well implant ( 40 ) of a second type residing below the anode; and a deep implant mask ( 34 ) of the second type patterned above the deep well implant and below both the cathode and a portion of the STI region.
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