| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve carrier mobility in both a p-channel-type semiconductor active region and an n-channel-type semiconductor active region by making proper stress act on each of both the regions. <P>SOLUTION: The semiconductor device has: a p-channel-type semiconductor active region; an n channel type semiconductor active region; an element isolation insulating layer; and an insulating layer formed of a material different from that of the element isolation insulating layer, formed so as to contact with both ends of the channel longitudinal direction of the p-channel-type semiconductor active region and making the compression stress of the channel longitudinal direction act on a channel of the p-channel-type semiconductor active region. The p-channel-type semiconductor active region is surrounded by an insulating layer contacting both ends of the channel length direction and an element isolation insulating layer contacting with the side surface substantially parallel to the channel length direction, and the n-channel-type semiconductor active region is surrounded by the element isolation insulating layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
