| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method for depositing a film by a vapor growth method using plasma such as a sputtering method, by which a high grade film is stably deposited. SOLUTION: In the film deposition method of a piezoelectric film for depositing the piezoelectric film comprising the structural element of a target on a substrate by arranging the target having a composition corresponding to the composition of the film to be deposited and the substrate to be opposed to each other and releasing the structural element of the target by the vapor growth method using the plasma such as the sputtering method, a film deposition condition is determined on the basis of a relation among a film deposition temperature Ts (°C), a distance D (mm) between the substrate and the target and the characteristics of the film to be deposited. In the piezoelectric film comprising one or more kinds of Pb-containing perovskite type oxide, the film deposition condition is preferably determined in a range satisfying a formula, 400≤Ts(°C)≤500 and a formula, 30≤D(mm)≤80 or a formula, 500≤Ts(°C)≤600 and a formula, 30≤D(mm)≤100. COPYRIGHT: (C)2009,JPO&INPIT
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