发明名称 |
Light Emitting Device Having Zener Diode Therein And Method Of Fabricating The Same |
摘要 |
Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.
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申请公布号 |
US2008265272(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20070090053 |
申请日期 |
2007.03.20 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
OH DUCK HWAN;LEE SANG JOON;KIM KYUNG HAE |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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