发明名称 |
Method for Manufacturing Semiconductor Device |
摘要 |
The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.
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申请公布号 |
US2008268655(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20050794325 |
申请日期 |
2005.11.29 |
申请人 |
GALE GLENN;HIROTA YOSHIHIRO;MURAKI YUSUKE;NAKAMURA GENJI;KUSHIBIKI MASATO;SHINDO NAOKI;SHIMIZU AKITAKA;ASHIGAKI SHIGEO;KATO YOSHIHIRO |
发明人 |
GALE GLENN;HIROTA YOSHIHIRO;MURAKI YUSUKE;NAKAMURA GENJI;KUSHIBIKI MASATO;SHINDO NAOKI;SHIMIZU AKITAKA;ASHIGAKI SHIGEO;KATO YOSHIHIRO |
分类号 |
H01L21/469;H01L21/00 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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