| 摘要 |
<p>The method involves applying a self-supporting, prefabricated metal structure (30) on a front side (11) of a semiconductor wafer (10) and isolating a semiconductor device after application of the metal structure. The metal structure includes a multiplicity of support units that are attached to the semiconductor device, where the support units are connected by bars. Hollow and/or intermediate spaces on the front side of the semiconductor wafer are filled with an insulating material. The wafer is thinned after the application of the metal structure. Independent claims are also included for the following: (1) a semiconductor wafer with a front side (2) a manufacturing device for semiconductor devices.</p> |
