| 摘要 |
An image sensor and a method for manufacturing the same are provided to block the incident light for a CMOS circuit of unit pixel and to improve the quality of the image sensor. An image sensor comprises a pixel part and a peripheral part; a semiconductor substrate having a photodetection device; a circuit region formed on the semiconductor substrate; a metal wiring layer including metal lines; a light shielding layer composed of the same material of the metal line, formed on the metal line of the pixel part; a microlens disposed at a corresponding position to the photodetection device on the metal wiring layer.
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