| 摘要 |
The present invention relates to a plasma chamber cathode and outer ring made of only silicon. When the anode (i.e., a voltage device) used in the plasma process of a semiconductor wafer is deformed due to the pressure of the R. F gas, the cathode coupled to the bottom of the anode must be deformed in cooperation with the anode. However, the cathode is comprised of silicon and graphite, which are elastomer-bonded. Thus, since the cathode is not flexibly deformed in cooperation with the deformation of the anode, bolts coupled to the anode, the cathode and the outer ring are broken and deviated. The graphite material easily generates particles. To solve the problem, the cathode is made of only silicon, and a plate groove and ring grooves are formed on the top portion of the cathode. A plate and rings are inserted into the plate groove and the ring grooves, respectively, so that a space portion is defined between the plate groove and the plate, and between the ring grooves and the rings. Accordingly, the cathode can be easily deformed in cooperation with the deformation of the anode. It is therefore possible to prohibit the occurrence of particles.
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