发明名称 Pressure-contact power semiconductor module and method for producing the same
摘要 A pressure-contact power semiconductor module is arranged on a heat sink. The power semiconductor module is used with at least one substrate provided with conductor tracks and power semiconductor components. The module has a mounting body, on the underside of which the at least one substrate is arranged, and which is formed with cutouts. The module also includes a load connection element which is provided with contact feet that project away from strip sections and make pressure contact with the conductor tracks. The power semiconductor module additionally has a dimensionally stable cover, which covers the mounting body on all sides and is connected to the mounting body by means of snap-action latching connections. At least one pad element is restrained between the cover and the strip sections of the load connection elements.
申请公布号 US2008266812(A1) 申请公布日期 2008.10.30
申请号 US20080080624 申请日期 2008.04.04
申请人 SEMIKRON ELEKTRONIK GMBH & CO., KG 发明人 STEGER JURGEN;EBERSBERGER FRANK
分类号 H05K7/20 主分类号 H05K7/20
代理机构 代理人
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