发明名称 |
Pressure-contact power semiconductor module and method for producing the same |
摘要 |
A pressure-contact power semiconductor module is arranged on a heat sink. The power semiconductor module is used with at least one substrate provided with conductor tracks and power semiconductor components. The module has a mounting body, on the underside of which the at least one substrate is arranged, and which is formed with cutouts. The module also includes a load connection element which is provided with contact feet that project away from strip sections and make pressure contact with the conductor tracks. The power semiconductor module additionally has a dimensionally stable cover, which covers the mounting body on all sides and is connected to the mounting body by means of snap-action latching connections. At least one pad element is restrained between the cover and the strip sections of the load connection elements.
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申请公布号 |
US2008266812(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20080080624 |
申请日期 |
2008.04.04 |
申请人 |
SEMIKRON ELEKTRONIK GMBH & CO., KG |
发明人 |
STEGER JURGEN;EBERSBERGER FRANK |
分类号 |
H05K7/20 |
主分类号 |
H05K7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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