| 摘要 |
A method for polishing a semiconductor wafer is provided to reduce the defect on a Si1-xGex layer and has a wafer surface adequate for the epitaxial growth of transformed silicon layer. A method for the single-sided polishing of semiconductor wafers(21) is related to polishing plural wafers with plural grindings. The method includes the step of obtaining at least one wafer among the wafers which have an Si1-xGex layer through the polishing process, one grinding including at least one polishing process; the step of providing the polishing pressure onto a rotation polish plate containing a grinder with at least one wafer, supplying an abrasive between the semiconductor wafer and the grinders, and moving the wafer. The supplied abrasive contains the component capable of dissolving the alkaline component and germanium.
|
