| 摘要 |
A capacitor in a semiconductor device and a method for manufacturing the same are provided to improve the degree of integration of the capacitor by forming plural capacitors without requiring an increase of area. A capacitor in a semiconductor device comprises a first capacitor having a first insulating layer(101) and a first conduction layer(102) on a semiconductor substrate(100) connected to a ground voltage; a second capacitor having the first conduction layer, a second insulating layer(104), and a second conduction layer(106). The first conduction layer is connected to a conduction layer though the second insulating layer.
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