| 摘要 |
A semiconductor device and method of manufacturing the same. The method includes: forming a trench in a silicon substrate; forming a first insulating film on a surface of the silicon substrate, the surface including an interior wall of the trench; forming a polysilicon film which plugged in the trench and covered on an entire surface of the silicon substrate; forming a second insulating film with oxidizing a portion of the polysilicon film disposed outside of the trench, and oxidizing a surface region of the silicon substrate located beneath the first insulating film disposed outside of the trench and a surface region of the polysilicon film in the trench; and forming an embedded polysilicon layer by removing the second insulating film so that the surface of the silicon substrate is partially exposed and the polysilicon film partially remains in the trench.
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