发明名称 |
Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD |
摘要 |
The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
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申请公布号 |
US7440666(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20050154034 |
申请日期 |
2005.06.16 |
申请人 |
AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD. |
发明人 |
BOUR DAVID P.;CORZINE SCOTT W. |
分类号 |
G02B6/10;G02B6/13;H01S5/12;H01S5/20;H01S5/22;H01S5/227;H01S5/32;H01S5/343 |
主分类号 |
G02B6/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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