| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of suppressing the damage to a metal layer. SOLUTION: This manufacturing method of the semiconductor device comprises the steps of depositing an oxide film 3 on Cu wiring 2, forming a via hole H reaching the Cu wiring 2 by dry-etching the oxide film 3, supplying DIW into the via hole H, supplying ammonium phosphate into the via hole H after supplying the DIW, and filling the via hole H with an electrically conductive material 5 after supplying the ammonium phosphate. COPYRIGHT: (C)2009,JPO&INPIT
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