METHODS AND APPARATUS FOR FORMING A POLYSILICON CAPACITOR

摘要

An embodiment relates generally to a method of forming a capacitor. The method includes depositing a first layer of polysilicon on a substrate (105) and implanting a high dose of implant into the first layer of polysilicon (110). The method also includes depositing a layer of dielectric (115) over the first layer of polysilicon and depositing a second layer of polysilicon (120) over the layer of dielectric. The method further includes implanting an equivalent concentration of implant in both the first layer of polysilicon into the second layer of polysilicon.