| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor device, in which a sidewall insulating film covering the side surface of a gate electrode of a first element is formed while the occurrence of a damage caused by etching on a region on which a second element of a semiconductor substrate is formed is suppressed. SOLUTION: The method of manufacturing the semiconductor device 100 comprises the steps of forming the gate electrode 28 on a region of a silicon substrate 11, on which a field effect transistor 2 is formed, forming a spacer insulating film 42 so as to cover the surface of the gate electrode 28 and the region of the silicon substrate 11, on which a bipolar transistor 1 is formed, and etching the spacer insulating film 42 from its surface by a predetermined thickness, and thereby forming a sidewall insulating film 30 covering the side surface of the gate electrode 28 in a state in which the spacer insulating film 42 remains with the predetermined thickness on the region of the silicon substrate 11, on which the bipolar transistor 1 is formed. COPYRIGHT: (C)2009,JPO&INPIT
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