| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve quality of a CMOS transistor by forming, in a single chip, both a pMISFET which requires high drivability and a pMISFET of which high reliability is demanded. <P>SOLUTION: The semiconductor device comprises a first pMISFET region 121 having Si channel, a second pMISFET region 122 having Si channel, and an nMISFET region 123 having Si channel. In the first pMISFET 121, a first SiGe layer 321, which applies first compression distortion to the Si channel across the Si channel is formed embedded. In the second pMISFET region 122, a second SiGe layer 322, which applies second compression distortions that differ in magnitude from the first ones to the Si channel, across Si channel, is embedded. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
