| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element which has an excellent high-speed responsiveness with a small specific inductive capacity in an insulating film, and also has an excellent mechanical strength in the insulating film, and a high reliability in a wiring. <P>SOLUTION: In a manufacturing method of the semiconductor element having the step of forming a cavity 3 in a film 2, this method has the irradiation step of, after the cavity 3 is formed, irradiating an electromagnetic energy on the film 2 formed with the cavity. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
