| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device, capable of preventing deterioration due to a manufacturing process and degradation over time, after manufacture to the utmost in the solid-state imaging device which includes a pair of electrodes and a photoelectric conversion film sandwiched between them. SOLUTION: A solid-state imaging device 100 has a plurality of photoelectric conversion parts, arranged at the upper part of a substrate and a color filter formed at the upper part of each of a plurality of photoelectric conversion parts. The photoelectric conversion part comprises a lower electrode 7, formed at the upper part of the substrate; a photoelectric conversion film 9 formed on the lower electrode 7, and an upper electrode 10 formed on the photoelectric conversion film 9, and is provided with a protective film 11, that is formed by an atomic layer deposition method (ALD method) to protect the photoelectric conversion part formed on the upper electrode 10; a protective film 15 that is formed between the upper electrode 10 and the protective film 11 by the method (sputtering method), other than the ALD method for preventing the characteristic deterioration of the photoelectric conversion part caused by the ALD method; and a polymeric material film 12 for reinforcing the functions of the protective film 11 formed on the protective film 11. COPYRIGHT: (C)2009,JPO&INPIT
|
